Wafer Thinning

Plasma stress relief and release for thin and ultra thin wafers UTW

Wafer thinning below 40µm wafer thickness may require stress relief since the grinding and polishing induced damages to the wafer surface causes, kerfs, micro-cracks and potentiall chipping (when using a dicing before grinding (DBG) process )*. In order to improve die strength on ultra thin die (die thickness < 40µm) a dry plasma etch process step in the assembly line can increase die strength and hence improve yield and reliability in high volume production.


*DBG is a special wafer thinning and dicing process developed by DISCO Corporation, Japan